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NTMD6P02R2
Preferred Device
Power MOSFET 6 Amps, 20 Volts
P-Channel SO-8, Dual
Features
* * * * * * *
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO-8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SO-8 Mounting Information Provided
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6 AMPERES 20 VOLTS RDS(on) = 33 mW
P-Channel D Unit V V C/W W A A W A A C/W W A A W A A C/W W A A W A A 8 1 L Y WW = Location Code = Year = Work Week S G
Applications
* Power Management in Portable and Battery-Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Ambient (Note 1.) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) Thermal Resistance - Junction-to-Ambient (Note 2.) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) Thermal Resistance - Junction-to-Ambient (Note 3.) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) Symbol VDSS VGS RJA PD ID ID PD ID IDM RJA PD ID ID PD ID IDM RJA PD ID ID PD ID IDM Value -20 "12 62.5 2.0 -7.8 -5.7 0.5 -3.89 -40 98 1.28 -6.2 -4.6 0.3 -3.01 -35 166 0.75 -4.8 -3.5 0.2 -2.48 -30
MARKING DIAGRAM
SO-8, Dual CASE 751 STYLE 11
E6P02 LYWW
PIN ASSIGNMENT
Source-1 Gate-1 Source-2 Gate-2 1 2 3 4 8 7 6 5 Drain-1 Drain-1 Drain-2 Drain-2
1. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), t = 10 seconds. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), t = steady state. 3. Minimum FR-4 or G-10 PCB, t = steady state. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
Top View
ORDERING INFORMATION
Device NTMD6P02R2 Package SO-8 Shipping 2500 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
November, 2000 - Rev. 1
Publication Order Number: NTMD6P02R2/D
NTMD6P02R2
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) (continued)
Rating Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -5.0 Vdc, Peak IL = -5.0 Apk, L = 40 mH, RG = 25 ) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol TJ, Tstg EAS TL Value -55 to +150 500 260 Unit C mJ C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) *
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 25C) (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -12 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 Adc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = -4.5 Vdc, ID = -6.2 Adc) (VGS = -2.5 Vdc, ID = -5.0 Adc) (VGS = -2.5 Vdc, ID = -3.1 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -6.2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 5. and 6.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = -16 Vdc, VGS = -4.5 Vdc, ID = -6.2 Adc) 6 2 Ad ) (VDD = -16 Vdc, ID = -6.2 Adc, VGS = -4.5 Vdc, 4 5 Vdc RG = 6.0 ) (VDD = -10 Vdc, ID = -1.0 Adc, VGS = -10 Vdc, Vdc RG = 6.0 ) td(on) tr td(off) tf td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - - - - - 15 20 85 50 17 65 50 80 20 4.0 8.0 25 50 125 110 - - - - 35 - - nC ns ns (VDS = -16 Vd VGS = 0 Vd 16 Vdc, Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 1380 515 250 1700 775 450 pF VGS(th) -0.6 - RDS(on) - - - gFS - 0.027 0.038 0.038 15 0.033 0.050 - - Mhos -0.88 2.6 -1.20 - Vdc mV/C V(BR)DSS -20 - IDSS - - IGSS - IGSS - - 100 - -100 nAdc - - -1.0 -5.0 nAdc - -11.6 - - Vdc mV/C Adc Symbol Min Typ Max Unit
5. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. * Handling precautions to protect against electrostatic discharge is mandatory.
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NTMD6P02R2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (continued) *
Characteristic BODY-DRAIN DIODE RATINGS (Note 5.) Diode Forward On-Voltage Diode Forward On-Voltage Reverse Recovery Time (IS = -1.7 Adc, VGS = 0 Vdc, 1 7 Ad Vd dIS/dt = 100 A/s) Reverse Recovery Stored Charge 5. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. * Handling precautions to protect against electrostatic discharge is mandatory. (IS = -1.7 Adc, VGS = 0 Vdc) (IS = -1.7 Adc, VGS = 0 Vdc, TJ = 125C) (IS = -6.2 Adc, VGS = 0 Vdc) (IS = -6.2 Adc, VGS = 0 Vdc, TJ = 125C) VSD VSD trr ta tr QRR - - - - - - - - -0.80 -0.65 -0.95 -0.80 50 20 30 0.04 -1.2 - - - 80 - - - C Vdc Vdc ns Symbol Min Typ Max Unit
12 -ID, DRAIN CURRENT (AMPS) 10 8.0
-10 V
-ID, DRAIN CURRENT (AMPS)
-4.5 V -3.8 V
-2.1 V
10 VDS -10 V 8.0
TJ = 25C -3.1 V 6.0 4.0 2.0 0 -1.5 V VGS = -1.3 V 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -2.5 V -1.8 V
6.0 25C 4.0 100C 2.0 0 TJ = -55C
0
1.0 1.5 2.0 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.05 ID = -6.2 A TJ = 25C
0.05 TJ = 25C 0.04 VGS = -2.5 V -2.7 V 0.03 -4.5 V
0.04
0.03
0.02
0.01 0
0.02
0
2.0 4.0 6.0 8.0 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
0.01
0
2.0
8.0 10 4.0 6.0 -ID, DRAIN CURRENT (AMPS)
12
14
Figure 3. On-Resistance versus Gate-To-Source Voltage
Figure 4. On-Resistance versus Drain Current and Gate Voltage
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NTMD6P02R2
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.6 ID = -6.2 A VGS = -4.5 V
1000
VGS = 0 V
TJ = 125C 100C
-I DSS , LEAKAGE (nA)
1.4
100
1.2
10
1
1 25C 0.1 0.01
0.8 0.6 -50
-25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C)
150
4
8 12 16 20 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 Crss 2000 1500 1000 500 0 10 5.0 0 -VGS -VDS 5.0 10 15 20 Crss Ciss Coss Ciss VDS = 0 V VGS = 0 V TJ = 25C 5
Figure 6. Drain-To-Source Leakage Current versus Voltage
20 QT 4 VDS 3 Q1 Q2 VGS 12 16 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2 ID = -6.2 A VDS = -16 V VGS = -4.5 V TJ = 25C 0 5.0 10 15 20 25
8
1 0
4 0
Qg, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000 VDD = -16 V ID = -1.0 A VGS = -10 V t, TIME (ns)
Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge
1000 VDD = -16 V ID = -6.2 A VGS = -4.5 V
td(off) t, TIME (ns) tf
100 tr
100
tf tr td(off)
td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 10 1
td(on) 10 RG, GATE RESISTANCE (OHMS) 100
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Resistive Switching Time Variation versus Gate Resistance
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NTMD6P02R2
DRAIN-TO-SOURCE DIODE CHARACTERISTICS
5 -IS, SOURCE CURRENT (AMPS) -ID , DRAIN CURRENT (AMPS) VGS = 0 V TJ = 25C 100
4
VGS = 2.5 V SINGLE PULSE TC = 25C
1.0 ms
10 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10
3
2
1 0
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
dc 100
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
Figure 12. Maximum Rated Forward Biased Safe Operating Area
di/dt IS ta trr tb TIME tp IS 0.25 IS
Figure 13. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
10 Rthja(t)EFFECTIVE TRANSIENT , THERMAL RESISTANCE
1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Chip
0.0175
0.1
Normalized to ja at 10s.
0.0710 0.2706 0.5776 0.7086
0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
Ambient
Figure 14. Thermal Response
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NTMD6P02R2 INFORMATION FOR USING THE SO-8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process.
0.060 1.52
0.275 7.0
0.155 4.0
0.024 0.6
0.050 1.270
inches mm
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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NTMD6P02R2
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 15 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 "RAMP" 200C
STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP"
STEP 4 HEATING ZONES 3 & 6 "SOAK"
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
160C
STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205 TO 219C "SPIKE" PEAK AT 170C SOLDER JOINT
150C 100C 100C DESIRED CURVE FOR LOW MASS ASSEMBLIES 5C 140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 15. Typical Solder Heating Profile
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NTMD6P02R2
PACKAGE DIMENSIONS
SO-8 CASE 751-07 ISSUE V
-X- A
8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
B
1 4
S
0.25 (0.010)
M
Y
M
-Y- G C -Z- H D 0.25 (0.010)
M SEATING PLANE
K
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
XXXXXX ALYW
STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NTMD6P02R2/D

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